Active and preferred
RoHS Compliant
Lead-free

6EDL04I06NC

600 V three-phase gate driver IC bare die with integrated bootstrap diode, over current protection, enable and fault reporting
Data Sheet

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6EDL04I06NC
6EDL04I06NC
Data Sheet

Product details

  • Channels
    6
  • Configuration
    Three Phase
  • Input Vcc
    13 V to 17.5 V
  • Isolation Type
    Functional levelshift SOI (Silicon On Insulator)
  • Output Current (Sink)
    0.375 A
  • Output Current (Source)
    0.17 A
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    490 ns
  • Turn On Propagation Delay
    530 ns
  • VBS UVLO (Off)
    9.8 V
  • VBS UVLO (On)
    11.7 V
  • VCC UVLO (Off)
    9.8 V
  • VCC UVLO (On)
    11.7 V
  • Voltage Class
    600 V
Recommended
OPN
6EDL04I06NCX1SA1
Product Status active and preferred
Infineon Package --
Package Name N/A
Packing Size 1
Packing Type WAFER SAWN
Moisture Level N/A
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package --
Package Name -
Packing Size 1
Packing Type WAFER SAWN
Moisture Level -
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
EiceDRIVER™ 600 V three phase gate driver IC bare die for MOS-transistors and IGBTs with 0.17 A source and 0.375 A sink currents and LS-SOI technology.

Features

  • Thin-film-SOI-technology
  • Integrated bootstrap diode
  • Maximum blocking voltage +600V
  • Separate control for six drivers
  • CMOS and LSTTL compatible input
  • Cross-conduction prevention
  • OCP and UVLO protection

Benefits

  • Space saving package
  • Improved energy efficiency

Diagrams

6ED003L06-C2-6EDL04I06NC
6ED003L06-C2-6EDL04I06NC
6ED003L06-C2-6EDL04I06NC 6ED003L06-C2-6EDL04I06NC 6ED003L06-C2-6EDL04I06NC
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