5962-1821101QXC
Active and preferred
RoHS Compliant
Lead-free

5962-1821101QXC

Datasheet
package

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5962-1821101QXC
5962-1821101QXC
Datasheet


Product details

  • Density
    256 kBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Au
  • Operating Temperature range
    -55 °C to 125 °C
  • Operating Voltage (VCCQ) max
    5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    220 °C
  • Planned to be available until at least
    2033
  • Qualification
    Military
  • Speed
    35 ns

Recommended
OPN
5962-1821101QXC
Product Status active and preferred
Infineon Package
C-DIP-32
Package Name CERDIP-32 (002-23724)
Packing Size 24
Packing Type TUBE
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
US
Country of Diffusion (CoD)
US

Product Status
Active
Infineon Package
C-DIP-32
Package Name CERDIP-32 (002-23724)
Packing Size 24
Packing Type TUBE
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
US
Country of Diffusion (CoD)
US
Infineon nvSRAM memories offer the high performance of traditional SRAMs while providing the added benefits of non-volatility. These devices offer infinite endurance and are well suited for applications such as error logging in flight data recorders.

Features

  • 256 Kbit density
  • 32K x 8 organization
  • 35 ns access time
  • Infinite endurance
  • 20-year data retention
  • -55 to +125°C military temperature grade
  • 32-pin ceramic dual in-line package
  • DLAM QML qualified SMD 5962-18211

Applications

Documents

Design resources

Partner solutions

Developer community