2EDL5012AA-U2D
NEW
coming soon
RoHS Compliant
Lead-free

2EDL5012AA-U2D

NEW
The 2EDL5012AA-U2D is a 120 V half-bridge gate driver designed to drive GaN transistors as well as logic level MOSFETs
Datasheet

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2EDL5012AA-U2D
2EDL5012AA-U2D
Datasheet

Product details

  • Input Voltage range
    4.5 V to 5.5 V
  • Iout range
    1.5 A to 4 A
  • Number of Outputs
    2
  • Output Voltage range
    0 V to 5.5 V
  • Package
    PG-TSNP-12-6, 2 x 2 mm
  • Qualification
    Industrial
  • Topology
    High & Low Side Driver
OPN
2EDL5012AAU2DXTMA1
Product Status coming soon
Infineon Package PG-TSNP-12
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status coming soon
Infineon Package PG-TSNP-12
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The 2EDL5012AA-U2D is a half-bridge gate driver designed to drive both the high-side and the low-side enhancement mode GaN transistors as well as logic level MOSFETs in a synchronous buck or half-bridge configuration. The 2EDL5012AA-U2D has different output current capabilities from 1.5 A peak to 4 A peak and it is available in TSNP-12 pins 2 mm x 2 mm package.

Features

  • Dual independent inputs
  • UVLO for both high- and low-side drivers
  • Integrated bootstrap switch
  • Active bootstrap switch
  • Maximum bootstrap voltage of 120 V
  • Split outputs for better output strength
  • 4 A/4 A, 1.5 A/4 A and 1.5 A/1.5 A
  • Built-in active Miller clamp
  • 20 ns typical propagation delay
  • 1 ns typical propagation delay matching
  • 4.5 V to 5.5 V supply voltage range
  • Offered in TSNP-12 2x2 package

Benefits

  • Support wide range of power topologies
  • Compact and thermally capable solution
  • Suitable for high power applications
  • Flexible for many customer requirements
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