Active and preferred
RoHS Compliant
Lead-free

1EDR3146HQE

5.7 kV (rms) single-channel gate driver IC with AEC-Q100 qualification, reinforced isolation, 6.5 A output current, 15 V UVLO
Data Sheet
package

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1EDR3146HQE
1EDR3146HQE
Data Sheet

Product details

Recommended
OPN
1EDR3146HQEXUMA1
Product Status active and preferred
Infineon Package
PG-LDSO-8
Package Name N/A
Packing Size 1500
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-LDSO-8
Package Name -
Packing Size 1500
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
EiceDRIVER™ Compact 2300 V single-channel isolated gate driver with +/-6.5 A typical peak output current in an 8-pin DSO wide body package for GaN HEMTs, IGBTs, MOSFETs and SiC MOSFETs. Qualified according to AEC-Q100. Offers secondary ground pin as a reference for enhanced UVLO protection with bipolar supply configuration.

Features

  • For up to 2300 V Switches
  • 2300 V input-output functional isolation
  • Galvanically isolated coreless xformer
  • 35 V abs. max. output supply voltage
  • Up to 17 V input supply voltage
  • 34 ns typ propogation delay
  • 14.75 V / 16.0 V UVLO protection
  • CTI 600 Package with 8 mm creepage
  • Secondary Ground Pin
  • Product validation according to AEC-Q100

Benefits

  • PMOS Output for Reduced Switching Losses
  • Strong 6.5 A output stage
  • Best-in-class CMTI of > 300 kV/µs
  • 8 mm input-to-output
  • Max. 8 ns Part-to-part prop delay skew+
  • IEC 60747-17 (planned), UL 1577
  • VIORM = 1767 V (peak, reinforced)
  • VISO = 5.7 kV (rms) for 1 min
  • UVLO options for GaN, Si, IGBT, SiC
  • Pin-to-pin package option

Documents

Documents

Design resources

Partner solutions

Developer community

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