Overview

The 650 V TRENCHSTOP™ 5 discrete IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in efficiency for hard-switching applications. When high efficiency, lower system costs, and increased reliability are demanded, TRENCHSTOP™ 5 is the only option. TRENCHSTOP™ 5 IGBTs deliver a dramatic reduction in switching and conduction losses.

Key features
  • Reduced switching/conduction losses
  • 650 V breakthrough voltage
  • High speed switching
  • Low COES/EOSS
Applications
Uninterruptible power supplies(UPS)
Photovoltaic

Products

About

About TRENCHSTOP™ 5 F5

The 650 V TRENCHSTOP™ 5 H5 family is optimized for PFC and PWM topologies in applications such as UPS, solar, inverterized welding machines, and hard-switching applications. 

Key features

The TRENCHSTOP™ 5 H5 product family offers a number of special features, including a 650 V breakdown voltage and, compared to Infineon's best-in-class HighSpeed 3 family, a 2.5 lower Qg factor, reduced switching losses by a factor of 2, and a 200 mV reduction in VCE(sat). In addition, the products are copacked with Infineon's Rapid Si diode technology, have low COES/EOSS, a mild positive temperature coefficient VCE(sat), and offer temperature stability of Vf.

Key benefits

The advantages of the TRENCHSTOP™ 5 H5 products are best-in-class efficiency, resulting in lower junction and case temperatures, and thus higher device reliability, and a possible 50 V increase in bus voltage without compromising the reliability, and a compelling design with higher power density.

About TRENCHSTOP™ 5 F5

The 650 V TRENCHSTOP™ 5 H5 family is optimized for PFC and PWM topologies in applications such as UPS, solar, inverterized welding machines, and hard-switching applications. 

Key features

The TRENCHSTOP™ 5 H5 product family offers a number of special features, including a 650 V breakdown voltage and, compared to Infineon's best-in-class HighSpeed 3 family, a 2.5 lower Qg factor, reduced switching losses by a factor of 2, and a 200 mV reduction in VCE(sat). In addition, the products are copacked with Infineon's Rapid Si diode technology, have low COES/EOSS, a mild positive temperature coefficient VCE(sat), and offer temperature stability of Vf.

Key benefits

The advantages of the TRENCHSTOP™ 5 H5 products are best-in-class efficiency, resulting in lower junction and case temperatures, and thus higher device reliability, and a possible 50 V increase in bus voltage without compromising the reliability, and a compelling design with higher power density.

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