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The TRENCHSTOP™ 5 IGBT technology has been released in six different variants  -  H5, F5, L5, WR5, WR6, and S5  –  optimized according to the switching frequencies and the best trade-off between switching and conduction losses required to deliver the highest performance in target applications such as welding, RAC/CAC PFC, UPS, solar energy systems, and energy storage.

Not only through-hole packages but SMD packages like D2PAK package are included in the TRENCHSTOP™ 5 IGBT technology portfolio, which provides designers more flexibility to choose different packages in the same technology.

TRENCHSTOP™ 5 S5 is available in a small footprint package TO-220-3 which enables higher power density in a compact size for through-hole assembly. 

The Ultra-thin TRENCHSTOP™ 5 IGBT technology from Infineon allows higher power density in a smaller chip size. Infineon is the first on the market able to fit 40 A 650 V IGBT with 40 A diode in D2PAK package – 25 percent higher than any other competitor offering maximum 30 A Duopack IGBT in D2Pak.  Now, the upgrade of the available SMD designs for higher power output Pout is possible.

The 650 V TRENCHSTOP™ 5 S5 in TO-220-3 package is suitable for use in applications when high current density in a small package size is required, for example, motor drive in corded power tools.

28 A and 39 A current ratings of TRENCHSTOP™ 5 S5 devices are available in the TO-220-3 package.

The TRENCHSTOP™ 5 IGBT technology has been released in six different variants  -  H5, F5, L5, WR5, WR6, and S5  –  optimized according to the switching frequencies and the best trade-off between switching and conduction losses required to deliver the highest performance in target applications such as welding, RAC/CAC PFC, UPS, solar energy systems, and energy storage.

Not only through-hole packages but SMD packages like D2PAK package are included in the TRENCHSTOP™ 5 IGBT technology portfolio, which provides designers more flexibility to choose different packages in the same technology.

TRENCHSTOP™ 5 S5 is available in a small footprint package TO-220-3 which enables higher power density in a compact size for through-hole assembly. 

The Ultra-thin TRENCHSTOP™ 5 IGBT technology from Infineon allows higher power density in a smaller chip size. Infineon is the first on the market able to fit 40 A 650 V IGBT with 40 A diode in D2PAK package – 25 percent higher than any other competitor offering maximum 30 A Duopack IGBT in D2Pak.  Now, the upgrade of the available SMD designs for higher power output Pout is possible.

The 650 V TRENCHSTOP™ 5 S5 in TO-220-3 package is suitable for use in applications when high current density in a small package size is required, for example, motor drive in corded power tools.

28 A and 39 A current ratings of TRENCHSTOP™ 5 S5 devices are available in the TO-220-3 package.

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