Infineon supplies silicon carbide technology to Fox ESS, enhancing efficiency of residential energy storage systems

Technology news

Aug 26, 2026

Munich, Germany – 26 August 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) supplies silicon carbide (SiC) power semiconductors to Fox ESS, a leading provider of renewable energy solutions, to enhance the efficiency of its residential energy storage systems (ESS). Leveraging Infineon's CoolSiC™ MOSFETs 1200 V G2 in the Q-DPAK package, Fox ESS has reduced switching losses by 70 percent. As a result, the company’s PQ3-Ultra energy storage system achieves a peak photovoltaic (PV) inverter efficiency of up to 98.78 percent in grid-tied operation and a peak battery charge/discharge efficiency of up to 98.47 percent.

"With our SiC MOSFETs in the Q-DPAK package, we are enabling a new level of efficiency, thermal performance and design flexibility for residential energy storage systems," said Amit Raut, Application Manager Photovoltaic and Residential ESS at Infineon. "Fox ESS is demonstrating how advanced SiC technology can translate into measurable system-level gains and support the broader adoption of clean energy solutions in homes worldwide."

"The collaboration with Infineon is a major pillar of our strategy to deliver high-performance energy storage solutions," said Daniel Deng, R&D Director at Fox ESS. "Infineon's CoolSiC technology offers superior efficiency and outstanding reliability, values that perfectly match our philosophy. By working together, we will further advance the performance of residential energy storage systems and accelerate the adoption of renewable energy." 

Within Fox ESS's energy storage system, Infineon's CoolSiC MOSFETs 1200 V G2 in the top-side-cooled Q-DPAK package deliver optimized thermal performance, system efficiency and power density. The devices are specifically designed for demanding applications requiring high performance and reliability. Featuring Infineon's advanced .XT interconnection technology, they reduce thermal resistance and operating junction temperature, while the trench gate architecture helps lower switching losses. Compared with conventional bottom-side-cooled designs, the Q-DPAK package supports improved PCB layout, helping to reduce parasitic effects and stray inductance while enabling superior thermal management. Its compact footprint supports space-saving system designs, while compatibility with automated assembly simplifies cost-efficient, scalable manufacturing.

For its hybrid ESS solution combining the PQ-H3-Ultra-10.0 inverter with the EQ3300-5 battery, Fox ESS has achieved a System Performance Index (SPI) of 97.0 percent in a recent test by HTW Berlin University of Applied Sciences and AQUU Research. This ranks Fox ESS first in the 10 kW class among all hybrid inverter and storage systems tested in 2026 and marks the highest SPI score recorded since the evaluation was launched in 2018. Over the past three years, Fox ESS has installed more than 890,000 PV inverters and over 1 million batteries in more than 70 countries. 

The collaboration highlights both companies' shared commitment to advancing highly efficient and reliable residential energy solutions worldwide.

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 57,000 employees worldwide (end of September 2025) and generated revenue of about €14.7 billion in the 2025 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

 

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Infineon's CoolSiC MOSFETs 1200 V G2 in the top-side-cooled Q-DPAK package deliver optimized thermal performance, system efficiency and power density

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For its PQ3-Ultra energy storage system, Fox ESS has achieved an SPI of 97.0 percent in a recent test by HTW Berlin and AQUU Research.

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Information Number : inftn202608-131

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Veronika Seifried

Spokesperson Industrial and Infrastructure, GIP Division

+49 89 234 61662

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