Active and preferred
RoHS Compliant
Lead-free

S26HS02GTFPBHM050

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S26HS02GTFPBHM050
S26HS02GTFPBHM050

Product details

  • Classification
    ISO 26262-compliant
  • Density
    2 GBit
  • Family
    HS-T
  • Interface Bandwidth
    333 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    - / 166
  • Interfaces
    HYPERBUS
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 125 °C
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2037
  • Publish in NPSG
    N
  • Publish in PSG
    N
  • Qualification
    Automotive
OPN
S26HS02GTFPBHM050
Product Status active and preferred
Infineon Package
Package Name FBGA-24 (002-24801)
Packing Size 520
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name FBGA-24 (002-24801)
Packing Size 520
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S26HS02GTFPBHM050 is a 2 Gb SEMPER™ NOR Flash memory with a HYPERBUS™ interface, operating at 1.8 V and supporting DDR data rates up to 332 MBps (166 MHz). Built on 45-nm MIRRORBIT™ technology, it features ISO26262 ASIL B compliant and ASIL D ready functional safety, and AEC-Q100 Grade 1 qualification for -40°C to +125°C. The device offers 2,560,000 program-erase cycles, 25-year data retention, ECC and CRC for automotive and safety-critical applications.

Features

  • MIRRORBIT technology stores 2 bits/cell
  • HYPERBUS interface supports DDR up to 332
  • JEDEC JESD251 xSPI compliant
  • Legacy SPI interface (SDR up to 21 MBps)
  • Flexible sector architecture: uniform
  • Page programming buffer: 256 or 512 bytes
  • OTP secure silicon region: 1024 bytes
  • Functional safety: ISO26262 ASIL B compliant
  • Interface and data integrity CRC
  • Built-in ECC: SECDED on memory array data
  • Advanced sector protection
  • Hardware reset via CS# or RESET# pin

Benefits

  • 2 bits/cell increases memory density
  • 332 MBps DDR enables fast data access
  • xSPI compliance ensures broad compatibility
  • Dual interface eases system integration
  • Flexible sectors suit varied application
  • Large buffer boosts programming speed
  • OTP region secures sensitive data
  • Functional safety supports automotive use
  • CRC/ECC enhance data reliability
  • Sector protection prevents accidental
  • Hardware reset improves system robustness

Applications

Documents

Design resources

Developer community

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