Active and preferred
RoHS Compliant
Lead-free

S25FL512SAGMFIG11

ea.
in stock

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S25FL512SAGMFIG11
S25FL512SAGMFIG11
ea.

Product details

  • Density
    512 MBit
  • Family
    FL-S
  • Interface Bandwidth
    52 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
OPN
S25FL512SAGMFIG11
Product Status active and preferred
Infineon Package
Package Name SOIC-16 (002-15547)
Packing Size 235
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SOIC-16 (002-15547)
Packing Size 235
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S25FL512SAGMFIG11 is a 512 Mb SPI Multi-I/O NOR flash memory with MIRRORBIT™ technology and Eclipse™ architecture. It achieves up to 80 MBps read speed (DDR Quad, 80 MHz), supports 100,000 program-erase cycles minimum, and 20-year data retention. Operating from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O, it meets industrial and automotive temperature ranges up to 125°C.

Features

  • 3.0 V core with versatile I/O
  • SPI Multi-I/O: Single, Dual, Quad
  • DDR read commands for all I/O modes
  • 512-byte page programming buffer
  • Automatic ECC with single-bit correction
  • Uniform 256-KB sector erase
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • 1024-byte OTP secure region
  • Advanced sector and block protection
  • Supply voltage: 2.7 V to 3.6 V
  • I/O voltage: 1.65 V to VCC + 200 mV

Benefits

  • Flexible interface for various host systems
  • Fast data transfer with DDR and Quad I/O
  • Large buffer enables quick programming
  • ECC ensures reliable data storage
  • Easy sector management for erase
  • High endurance for frequent updates
  • Long-term data reliability
  • Secure OTP for device authentication
  • Robust protection against accidental writes
  • Wide supply range supports many designs
  • Data integrity with error reporting
  • Compatible with prior SPI flash families

Applications

Documents

Design resources

Developer community

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