Active and preferred

RIC7S113E4SCS

Data Sheet
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RIC7S113E4SCS
RIC7S113E4SCS
Data Sheet

Product details

  • Bias Supply Voltage
    5 V to 20 V
  • Channels
    2
  • Configuration
    High-side and low-side
  • Language
    SPICE
  • Output Voltage max
    20 V
  • OverClocking
    Delay Matching 20 (ns)
  • Package
    LCC-18
  • Product Category
    HiRel Power ICs
  • SEE
    81.9 MeV∙cm2/mg
  • Supply Voltage
    10 V to 20 V
  • tf
    17 ns
  • TID max
    100 Krad(Si)
  • toff
    100 ns
  • ton
    120 ns
  • tr
    25 ns
  • Voltage Class
    100 V
  • VS max
    400 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-LCC-18
Package Name LCC-18 CIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
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Product Status
Active
Infineon Package
C-LCC-18
Package Name LCC-18 CIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
Rad hard high voltage, high speed power MOSFET and IGBT driver RIC7S113E4SCS has independent high and low side referenced output channels. Intended for harsh radiation environments such as space, its electrical parameters are specified pre and post-irradiation up to 100 krad(Si) and SEE characterized up to a linear energy transfer (LET) of 81.9 MeV·cm2/mg. Screened per MIL-PRF-38535 Level S and in LCC CIC hermetic packaging.

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