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P2000DE45X168
Product details
-
ConfigurationIGBT + Diode
-
HousingDisc dia 168mm high 26mm / Ceramic
-
IC2000 A
-
QualificationIndustrial
-
TechnologyPress Pack
-
VCE(sat) (Tvj=25°C typ)2.7 V
-
VCES4500 V
-
VF (Tvj=25°C typ)3.4 V
|
OPN
|
P2000DE45X168HPSA1 |
|---|---|
| Product Status | coming soon |
| Infineon Package | BG-P16826K-1 |
| Package Name | N/A |
| Packing Size | 1 |
| Packing Type | TRAY |
| Moisture Level | NA |
| Moisture Packing | NON DRY |
| Lead-free | Yes |
| Halogen Free | No |
| RoHS Compliant | Yes |
| Country of Assembly (CoA) |
DE
|
| Country of Diffusion (CoD) |
DE
|
|
|
|
| Product Status | coming soon |
|---|---|
| Infineon Package | BG-P16826K-1 |
| Package Name | - |
| Packing Size | 1 |
| Packing Type | TRAY |
| Moisture Level | NA |
| Moisture Packing | NON DRY |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
| Country of Assembly (CoA) |
DE
|
| Country of Diffusion (CoD) |
DE
|
The Press Pack IGBT offers 2000 A with integrated freewheeling diode using Infineon Trench 4.5 kV IGBT chips.
Features
- Long term short on fail behavior
- High short-circuit capability
- Low VCE(SAT)
- Hermetically sealed housing
- Cooling of the device
Benefits
- High dynamic robustness
- Stack Design
Documents
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