Active and preferred
RoHS Compliant

ISZ113N10NM5LF2

OptiMOS™ 5 Single N-Channel Linear FET 100 V, 11.3 mΩ, 63 A in a PQFN 3.3x3.3 package
Data Sheet
package
ea.
in stock

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ISZ113N10NM5LF2
ISZ113N10NM5LF2
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.77
  • ID (@25°C) max
    63 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3 x 3.3
  • Polarity
    N
  • QG (typ @10V)
    23 nC
  • RDS (on) (@10V) max
    11.3 mΩ
  • Special Features
    Wide SOA
  • VDS max
    100 V
  • VGS(th)
    3.1 V
Recommended
OPN
ISZ113N10NM5LF2ATMA1
Product Status active and preferred
Infineon Package
PG-TSDSON-8
Package Name PQFN 3.3 x 3.3
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSDSON-8
Package Name PQFN 3.3 x 3.3
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
ISZ113N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a PQFN 3.3x3.3 mm package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C and 125˚C. The OptiMOS™ Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 3.3x3.3 package, ISZ113N10NM5LF2 is targeted for soft start and current limiting purpose in Power-over-Ethernet (PoE) application.

Features

  • Wide safe operating area (SOA)
  • Low RDS(on) 
  • High max. pulse current
  • High max. continuous current
  • Available in small low profile package

Benefits

  • Rugged linear mode operation
  • Low conduction losses
  • High in-rush current enabled
  • Fast start-up and shorter down time
  • Industry standard footprint

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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