Active and preferred
RoHS Compliant

ISZ106N12LM6

OptiMOS™ 6 power MOSFET logic level 120 V in PQFN 3.3 x 3.3 package
Data Sheet
package

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ISZ106N12LM6
ISZ106N12LM6
Data Sheet

Product details

  • Battery voltage
    48-72 V
  • Budgetary Price €/1k
    0.71
  • ID (@25°C) max
    62 A
  • IDpuls max
    248 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PQFN 3.3 x 3.3
  • Polarity
    N
  • Ptot max
    94 W
  • QG (typ @4.5V)
    10.4 nC
  • QG (typ @10V)
    19.6 nC
  • RDS (on) (@10V) max
    10.6 mΩ
  • RDS (on) (@4.5V) max
    14.2 mΩ
  • Special Features
    Logic Level
  • VDS max
    120 V
  • VGS(th) range
    1.2 V to 2.2 V
  • VGS(th)
    1.7 V
Recommended
OPN
ISZ106N12LM6ATMA1
Product Status active and preferred
Infineon Package
PG-TSDSON-8
Package Name PQFN 3.3 x 3.3
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TSDSON-8
Package Name PQFN 3.3 x 3.3
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 10.6 mOhm on-resistance. ISZ106N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family .

Features

  • Features: 58% better RDS(on)
  • up to 66% better FOMg
  • Up to 90% better Qrr
  • Up to 35% better FOMoss

Benefits

  • Very low on-resistance
  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant
  • Halogen-free
  • MSL1 classified

Applications

Documents

Documents

Design resources

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