Active and preferred
RoHS Compliant

ISC110N12NM6

OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package
Data Sheet
package
ea.
in stock

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ISC110N12NM6
ISC110N12NM6
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.5
  • ID (@25°C) max
    62 A
  • IDpuls max
    248 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • QG (typ @10V)
    15.4 nC
  • RDS (on) (@10V) max
    11 mΩ
  • VDS max
    120 V
  • VGS(th)
    3.1 V
Recommended
OPN
ISC110N12NM6ATMA1
Product Status active and preferred
Infineon Package
PG-TDSON-8
Package Name SuperSO8 5x6
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TDSON-8
Package Name SuperSO8 5x6
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
This is a normal level 120 V MOSFET in SuperSO8 packaging with 11 mOhm on-resistance. ISC110N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

Features

  • Compared to OptiMOS™ the technology features:
  • up to 40% better RDS(on)
  • up to 50% better FOMg
  • up to 50% better Qrr

Benefits

  • Very low on-resistance
  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant
  • Halogen-free
  • MSL1 classified

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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