ISC019N08NM7
Active and preferred
RoHS Compliant

ISC019N08NM7

OptiMOS™ 7 n-channel power MOSFET 80 V in SuperSO8
Data Sheet
package
ea.
in stock

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ISC019N08NM7
ISC019N08NM7
ea.
Data Sheet

Product details

  • ID (@25°C) max
    209 A
  • IDpuls (@25°C) max
    836 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Operating Temperature (Tj) range
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • Ptot max
    188 W
  • Ptot min
    188 W
  • QG (typ @10V)
    60 nC
  • RDS (on) (@10V) max
    1.9 mΩ
  • Special Features
    Fused leads
  • VDS max
    80 V
  • VGS(th) range
    2.3 V to 3.2 V
  • VGS(th)
    2.8 V
Recommended
OPN
ISC019N08NM7ATMA1
Product Status active and preferred
Infineon Package
PG-TDSON-8
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TDSON-8
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
OptiMOS™ 7 80 V is the latest technology setting a new industry standard for a perfect balance of power efficiency and performance with cost efficiency.

Features

  • High performance silicon technology
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

Benefits

  • >32% improved FOMs compared to OptiMOS™ 5
  • Improved switching performance compared to OptiMOS™ 5
  • Ease of use
  • Soft body diode
  • Robust reliable performance
Documents

Design resources

Partner solutions

Developer community

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