Active and preferred
RoHS Compliant

ISC016N08NM8

OptiMOS™ 8 n-channel power MOSFET 80 V in SuperSO8
Data Sheet
ea.
in stock

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ISC016N08NM8
ISC016N08NM8
ea.
Data Sheet

Product details

  • ID (@25°C) max
    241 A
  • IDpuls (@25°C) max
    964 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • Ptot (@25°C) max
    211 W
  • QG (typ @10V) max
    99 nC
  • RDS (on) (@10V) max
    1.64 mΩ
  • Special Features
    Fused leads
  • VGS(th) range
    2.5 V to 3.5 V
  • VGS(th)
    3 V
Recommended
OPN
ISC016N08NM8ATMA1
Product Status active and preferred
Infineon Package PG-TDSON-8
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package PG-TDSON-8
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
This OptiMOS™ 8 is a normal level 80 V MOSFET in SuperSO8 packaging with 1.6 mOhm on-resistance.

Features

  • Very low on-resistance
  • High-performance silicon technology
  • High current carrying capability
  • Industry-standard footprint

Benefits

  • Highest efficiency & power density
  • High system reliability
  • Thermal robustness
  • 175°C junction temperature rating

Documents

Documents

Design resources

Partner solutions

Developer community

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