NEW
Active and preferred
RoHS Compliant

ISC016N06NM5SC

NEW
OptiMOS™ 5 60 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled Drain-Down package
Data Sheet
package

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ISC016N06NM5SC
ISC016N06NM5SC
Data Sheet

Product details

  • ID (@25°C) max
    249 A
  • IDpuls max
    996 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6 DSC
  • Polarity
    N
  • Ptot max
    188 W
  • QG (typ @10V)
    74 nC
  • RDS (on) (@10V) max
    1.6 mΩ
  • Special Features
    Dual-Side Cooling
  • VDS max
    60 V
  • VGS(th)
    2.8 V
Recommended
OPN
ISC016N06NM5SCATMA1
Product Status active and preferred
Infineon Package
PG-WSON-8
Package Name SuperSO8 5x6 DSC
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-WSON-8
Package Name SuperSO8 5x6 DSC
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
OptiMOS™ 5 switching‑optimized power MOSFET in 60 V in PQFN 5x6 Dual‑Side Cooled drain‑down package delivers low RDS(on), reduced switching losses and strong thermal performance for AI, Datacenter & Telecom power conversion. The drain‑down DSC 5x6 package enables high current density and compact power architectures, meeting efficiency, transient and reliability targets for GPU/accelerator rails in dense data‑center servers.

Features

  • Low RDS(on), optimized switching losses
  • Low inductance for fast switching
  • Low-voltage overshoot
  • Optimized for advanced AI topologies
  • Low Qg/Qoss for high frequency
  • PQFN 5x6, dual-side cooled package

Benefits

  • Ease of use
  • Highest system efficiency
  • Low conduction & switching losses
  • Higher conversion efficiency, less heat
  • Benchmark reliabiltiy
  • Increased power density

Documents

Documents

Design resources

Partner solutions

Developer community

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