Active and preferred
RoHS Compliant

ISC011N06LM5

Optimos™ 5 logic level power MOSFET 60V in small package
Data Sheet
package
ea.
in stock

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ISC011N06LM5
ISC011N06LM5
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    1.42
  • ID (@25°C) max
    295 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N
  • QG (typ @4.5V)
    63 nC
  • QG (typ @10V)
    127 nC
  • RDS (on) (@10V) max
    1.15 mΩ
  • RDS (on) (@4.5V) max
    1.45 mΩ
  • Special Features
    Fused leads
  • VDS max
    60 V
  • VGS(th)
    1.1 V to 2.3 V
Recommended
OPN
ISC011N06LM5ATMA1
Product Status active and preferred
Infineon Package
PG-TDSON-8
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TDSON-8
Package Name SuperSO8 FL
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The ISC011N06LM5, Infineon's OptiMOS™ MOSFET in the SuperSO8 package extends the OptiMOS™ 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Features

  • Low 1.15 mohm max RDS(on)
  • Higher operating temp rating to 175°C
  • Low RthJC
  • Excellent thermal behavior
  • Low reverse recovery charge

Benefits

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

Documents

Documents

Design resources

Partner solutions

Developer community

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