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Infineon marks innovation milestone with world’s first 300-millimeter power silicon carbide (SiC) wafer
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IRHNPC9A7110SCV
Rad hard, 100 V, 9 A, R9 generation rad hard MOSFET in SMD-0.1 package – 100 krad TID, TXV level
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IRHNPC9A7110SCV
Product details
-
Die Size1
-
ESD ClassClass 1B
-
GenerationR9
-
ID (@25°C) max9 A
-
Optional TID Rating (kRad(si))100
-
PackageSMD-0.1
-
PolarityN
-
Product NameIRHNPC9A7110SCV
-
QG9.5 nC
-
QualificationTXV
-
RDS (on) (@25°C) max150 mΩ
-
TID max100 Krad(Si)
-
VBRDSS100 V
-
VF max1.2 V
|
OPN
|
|
|---|---|
| Product Status | coming soon |
| Infineon Package | |
| Package Name | SMD0.1 |
| Packing Size | N/A |
| Packing Type | N/A |
| Moisture Level | N/A |
| Moisture Packing | N/A |
| Lead-free | No |
| Halogen Free | Yes |
| RoHS Compliant | No |
|
|
|
| Product Status | coming soon |
|---|---|
| Infineon Package | |
| Package Name | SMD0.1 |
| Packing Size | 0 |
| Packing Type | |
| Moisture Level | - |
| Moisture Packing | |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
IRHNPC9A7110SCV is a R9 generation, rad hard, single N-channel MOSFET in a SMD-0.1 package that can handle 100 V and 9 A. It is optimal for space applications as its combination of low RDS(on) and fast switching times will allow for betterperformance in applications such as DC-DC converter or motor drives.
Features
- Single event effect (SEE) hardened
- Fast switching
- Hermetically sealed
- Ceramic package
- Low total gate charge
- Light weight
- ESD rating: Class 1A (MIL-STD-750, 1020)
- Surface mount
- Simple drive requirements
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