not for new design

IRHNM53110

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
package

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IRHNM53110
IRHNM53110
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1A
  • Generation
    R5
  • ID (@100°C) max
    4.4 A
  • ID (@25°C) max
    6.9 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    15 nC
  • QPL Part Number
    2N7503U8
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    220 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHNM53110 is a COTS rad hard R5 N-channel MOSFET in a SMD-0.2 package with 100V, 6.9A capabilities. R5 technology provides high-performance power MOSFETs for space applications with improved immunity to Single Event Effects (SEE). The low RDS(on) and gate charge also reduce power losses in DC-DC converters and motor control. This MOSFET offers voltage control, fast switching, and temperature stability.

Applications

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Documents

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