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IRHNA57Z60

Data Sheet
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IRHNA57Z60
IRHNA57Z60
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    75 A
  • ID (@25°C) max
    75 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    SMD-2
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    200 nC
  • QPL Part Number
    2N7467U2
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    3.5 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    30 V
  • VF max
    1.3 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNA57Z60 rad hard single N-channel MOSFET is perfect for space applications, featuring 30V and 75A capabilities. The low RDS(on) and gate charge reduce power losses in switching applications, while retaining MOSFET's advantages. These R5 COTS devices are characterized for both Total Dose and Single Event Effects (SEE) with electrical performance up to 100krad(Si) TID and come in a SMD-2 package.

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