Active and preferred

IRHLF7S7214SCS

Data Sheet
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IRHLF7S7214SCS
IRHLF7S7214SCS
Data Sheet

Product details

  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@25°C) max
    3.3 A
  • ID (@100°C) max
    2.1 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-205AF
  • Polarity
    N
  • QG
    18 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    1000 mΩ
  • SEE
    100 MeV∙cm2/mg
  • TID max
    100 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO205-3
Package Name TO-205AF (TO-39)
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO205-3
Package Name TO-205AF (TO-39)
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHLF7S7214SCS R7 N-channel MOSFET is a radiation-hardened device with a voltage rating of 200V and a current rating of 3.3A. With electrical performance up to 100krad(Si) TID and QIRL classification, it's ideal for interfacing CMOS and TTL control circuits to power devices in radiation environments. It maintains a threshold voltage within limits over temperature and radiation, while maintaining immunity to single event gate rupture and burnout.

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