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IRHLF7S7214

Data Sheet
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IRHLF7S7214
IRHLF7S7214
Data Sheet

Product details

  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@25°C) max
    3.3 A
  • ID (@100°C) max
    2.1 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-205AF
  • Polarity
    N
  • QG
    18 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    1000 mΩ
  • SEE
    100 MeV∙cm2/mg
  • TID max
    100 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLF7S7214 in TO-205AF package is a rad hard, 200V, 3.3A R7 N-channel MOSFET with electrical performance up to 100krad(Si) TID, suitable for use in space and other radiation environments. This COTS device provides immunity to single event gate rupture and burnout while maintaining acceptable operating limits for threshold voltage. Ideal for interfacing with logic gates, linear IC's and microcontrollers.

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