Active and preferred
RoHS Compliant
Lead-free

IRFI4212H-117P

100V Dual N-Channel Digital Audio Power MOSFET in a TO-220 Full-Pak(Iso) package
Data Sheet
package
ea.
in stock

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IRFI4212H-117P
IRFI4212H-117P
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.69
  • ID (@25°C) max
    11 A
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    TO-220 FullPAK
  • Polarity
    N+N
  • Ptot (@ TA=25°C) max
    18 W
  • Qgd (typ)
    6.2 nC
  • QG (typ @10V)
    12 nC
  • RDS (on) (@10V) max
    72.5 mΩ
  • RthJA max
    65 K/W
  • Tj max
    150 °C
  • VDS max
    100 V
  • VGS(th)
    4 V
  • VGS max
    20 V
Recommended
OPN
IRFI4212H-117PXKMA1
Product Status active and preferred
Infineon Package
TO220
Package Name FullPAK-220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
TO220
Package Name FullPAK-220
Packing Size 1000
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Features

  • Integrated half-bridge package
  • Key parameters optimized for Class-D
  • Low RDS(ON),Qg and Qsw
  • Low Qrr for better THD
  • Lead-free package

Benefits

  • 50% less part count and easy PCB layout
  • 50W/Channel in Half-Bridge
  • High efficiency and THD
  • Low EMI
  • Environmentally friendly

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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