IRF7907
not for new design
RoHS Compliant
Lead-free

IRF7907

30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package

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Product details

  • Budgetary Price €/1k
    0.34
  • ID (@25°C) max
    11 A, 9.1 A
  • Moisture Sensitivity Level
    1
  • Operating Temperature range
    -55 °C to 150 °C
  • Package
    SO-8
  • Polarity
    N+N
  • Ptot (@ TA=25°C) max
    2 W
  • Ptot max
    2 W
  • Qgd (typ)
    4.9 nC, 4.9 nC
  • QG (typ @4.5V)
    14 nC, 6.7 nC
  • RDS (on) (@4.5V) max
    13.7 mΩ, 20.5 mΩ
  • RDS (on) (@10V) max
    16.4 mΩ, 11.8 mΩ
  • RthJA max
    62.5 K/W
  • Special Features
    Logic Level
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS(th) range
    1.35 V to 2.35 V
  • VGS(th)
    1.8 V
  • VGS max
    20 V

OPN
IRF7907TRPBF
Product Status not for new design
Infineon Package
Package Name SO-8
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
CN,PH
Country of Diffusion (CoD)
GB,IL,TW

Product Status not for new design
Infineon Package
Package Name SO-8
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
CN,PH
Country of Diffusion (CoD)
GB,IL,TW

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Low Thermal resistance to PCB
  • Compatible with Existing Surface Mount Techniques
  • Low RDS(ON) at 4.5V VGS
  • Very Low Gate Charge
  • Dual N-Channel MOSFET
Documents

Design resources

Developer community