Active and preferred
RoHS Compliant
Lead-free

IRF6645

100V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ SJ package
ea.
in stock

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IRF6645
IRF6645
ea.

Product details

  • Budgetary Price €/1k
    0.47
  • ID (@25°C) max
    25 A
  • Micro-stencil
    IRF66SJ-25
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    DirectFET (S)
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    3 W
  • Ptot max
    42 W
  • Qgd
    4.8 nC
  • QG (typ @10V)
    14 nC
  • RDS (on) (@10V) max
    35 mΩ
  • RthJC max
    3 K/W
  • Tj max
    150 °C
  • VDS max
    100 V
  • VGS(th)
    3.95 V
  • VGS max
    20 V
OPN
IRF6645TRPBF
Product Status active and preferred
Infineon Package
Package Name DirectFET (S)
Packing Size 4800
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name DirectFET (S)
Packing Size 4800
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Features

  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • High-current rating
  • Dual-side cooling capability
  • Low package height of 0.7mm
  • Low parasitic (1-2 nH) pkg inductance
  • 100% lead-free (No RoHS exemption)

Benefits

  • Wide distribution availability
  • Industry standard qualification level
  • High power density
  • Optimum thermal performance
  • Compact form factor
  • High efficiency
  • Environmentally friendly

Applications

Documents

Design resources

Developer community

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