IRF6622

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 59 amperes.
Data Sheet

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IRF6622
IRF6622
Data Sheet

Product details

  • ID (@ TA=25°C) max
    15 A
  • ID (@ TA=70°C) max
    12 A
  • Micro-stencil
    IRF66SQ-25
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    DirectFET SQ
  • Polarity
    N
  • Ptot max
    34 W
  • Ptot (@ TA=25°C) max
    2.2 W
  • Qgd
    3.8 nC
  • QG
    11 nC
  • RDS (on) max
    6.3 mΩ
  • RDS (on) (@4.5V) max
    8.9 mΩ
  • RDS (on) (@10V) max
    6.3 mΩ
  • RthJC max
    3.7 K/W
  • Tj max
    150 °C
  • VDS max
    25 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
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