Active and preferred
RoHS Compliant
Lead-free

IRF150DM115

150 V single N-channel OptiMOS™ MOSFET in DirectFET™ package
Data Sheet
package

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IRF150DM115
IRF150DM115
Data Sheet

Product details

  • Budgetary Price €/1k
    1.26
  • ID (@25°C) max
    60 A
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    DirectFET
  • Polarity
    N
  • QG (typ @10V)
    33 nC
  • RDS (on) (@10V) max
    11.3 mΩ
  • VDS max
    150 V
  • VGS(th)
    3.8 V
Recommended
OPN
IRF150DM115XTMA1
Product Status active and preferred
Infineon Package
DIRECTFET
Package Name DirectFET (M)
Packing Size 4800
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
DIRECTFET
Package Name DirectFET (M)
Packing Size 4800
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant

Features

  • Double-side-cooled package
  • Low parasitic inductance
  • Low profile design
  • High current capability
  • 100% lead-free (no RoHS exemption)

Benefits

  • Enables designs with high power density
  • High efficiency
  • Minimized EMI
  • Optimized thermals
  • Board space reduction
  • Less device paralleling

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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