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RoHS Compliant

IQE065N10NM5CG

OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance.
Data Sheet
package
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IQE065N10NM5CG
IQE065N10NM5CG
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.92
  • ID (@25°C) max
    85 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    34 nC
  • RDS (on) (@10V) max
    6.5 mΩ
  • Special Features
    Center-Gate
  • VDS max
    100 V
  • VGS(th)
    3 V
Recommended
OPN
IQE065N10NM5CGATMA1
Product Status active
Infineon Package
PG-TTFN-9
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TTFN-9
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The OptiMOS™5 100 V PQFN 3.3x3.3 Source-Down MOSFET features low RDS(on) of 6.5 mOhm, with a flipped silicon die, which is positioned upside down inside of the component. This allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.

Features

  • Major reduction in RDS(on)30%
  • RthJCover current PQFN
  • Standard & Center Gate available
  • New, optimized layout possibilities

Benefits

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
  • Improved PCB losses
  • Reduced parasitics

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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