NEW
Active and preferred
RoHS Compliant

IQE036N08NM6CGSC

NEW
OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down Center Gate Dual-Side Cooling
Data Sheet
package

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IQE036N08NM6CGSC
IQE036N08NM6CGSC
Data Sheet

Product details

  • ID (@25°C) max
    118 A
  • IDpuls max
    472 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    30 nC
  • RDS (on) (@10V) max
    3.6 mΩ
  • Special Features
    Center Gate Dual Side Cooling
  • VDS max
    80 V
  • VGS(th)
    3 V
Recommended
OPN
IQE036N08NM6CGSCATMA1
Product Status active and preferred
Infineon Package
PG-WHTFN-9
Package Name N/A
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-WHTFN-9
Package Name -
Packing Size 6000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Features

  • High performance silicon technology
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

Benefits

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved heat dissipation
  • Improved power, SOA & avalanche current
  • Robust reliable performance

Documents

Documents

Design resources

Partner solutions

Developer community

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