Active and preferred
RoHS Compliant

IQE013N04LM6CG

OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on)
Data Sheet
package
ea.
in stock

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IQE013N04LM6CG
IQE013N04LM6CG
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.75
  • ID (@25°C) max
    205 A
  • IDpuls max
    820 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • Ptot max
    107 W
  • QG (typ @10V)
    41 nC
  • QG (typ @4.5V)
    20 nC
  • RDS (on) (@10V) max
    1.35 mΩ
  • RDS (on) (@4.5V) max
    1.9 mΩ
  • Special Features
    Center-Gate
  • VDS max
    40 V
  • VGS(th)
    1.6 V
Recommended
OPN
IQE013N04LM6CGATMA1
Product Status active and preferred
Infineon Package
PG-TTFN-9
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TTFN-9
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IQE013N04LM6CG, innovative OptiMOS™ power MOSFET Source-Down 40 V, 1.35mOhm, in a 3.3x3.3 PQFN Source-Down Center-Gate package. This best-in-class power MOSFET challenges the status quo in power density and form factor in the end application, minimize the internal restrictions of PCB area requirements, enabling an ergonomic design and optimizing the end user experience.

Features

  • RDS(on) reduced by up to 25%
  • Superior thermal performance in RthJC
  • Optimized layout possibilities
  • Standard and Center-Gate footprint

Benefits

  • High current capability
  • More efficient use of PCB area
  • Highest power density and performance
  • Center-Gate for MOSFET parallelization

Documents

Documents

Design resources

Partner solutions

Developer community

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