Active and preferred
RoHS Compliant

IQE013N04LM6

OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on)
Data Sheet
package
board
ea.
in stock

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IQE013N04LM6
IQE013N04LM6
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.75
  • ID (@25°C) max
    205 A
  • IDpuls max
    820 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    41 nC
  • QG (typ @4.5V)
    20 nC
  • RDS (on) (@10V) max
    1.35 mΩ
  • RDS (on) (@4.5V) max
    1.9 mΩ
  • VDS max
    40 V
  • VGS(th)
    1.6 V
Recommended
OPN
IQE013N04LM6ATMA1
Product Status active and preferred
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSON-8
Package Name PQFN 3.3x3.3 Source-Down
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
IQE013N04LM6 best-in-class power MOSFET Source-Down, 1.35mOhm, 40 V in a 3.3x3.3 PQFN package, minimizing the internal restrictions of PCB area requirements, enabling a more ergonomic design in power tool designs. Moving the inverter from the handle into the head minimizes the volume of the power tool motor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.

Features

  • RDS(on) – up to 25 percent
  • Superior thermal performance in RthJC
  • Optimized layout possibilities
  • Standard and Center-Gate footprint

Benefits

  • High current capability
  • More efficient use of PCB area
  • Highest power density and performance
  • Center-Gate for MOSFET parallelization

Documents

Documents

Design resources

Partner solutions

Developer community

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