Active
RoHS Compliant
Lead-free

IPW65R080CFDA

650V, N-Ch, 80 mΩ max, Automotive MOSFET, PG-TO-247-3, CoolMOS™ CFDA
ea.
in stock

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IPW65R080CFDA
IPW65R080CFDA
ea.

Product details

  • Budgetary Price €/1k
    3.44
  • ID (@25°C) max
    43.3 A
  • IDpuls max
    137 A
  • Mounting
    THT
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    TO247
  • Polarity
    N
  • Ptot max
    391 W
  • QG (typ @10V) max
    161 nC
  • QG
    161 nC
  • Qualification
    Automotive
  • RDS (on) max
    80 mΩ
  • RDS (on) (@10V) max
    80 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.32 K/W
  • Rth
    0.32 K/W
  • Special Features
    automotive
  • Technology
    CoolMOS™ CFDA
  • Topology
    Full Bridge
  • VDS max
    650 V
  • VGS(th) min
    3.5 V
  • VGS(th) max
    4.5 V
OPN
IPW65R080CFDAFKSA1
Product Status active
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.

Features

  • CoolMOS™ 3 series
  • low gate charge
  • low stored energy in COSS
  • low Qrr
  • automotive qualification
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • higher switching frequencies
  • high efficiency @ soft switching
  • higher power density
  • MOSFET suits hard & resonant topologies

Documents

Design resources

Developer community

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