not for new design
RoHS Compliant

IPT029N08N5

OptiMOS™ 5 power MOSFET 80V for telecom applications
Data Sheet
package
ea.
in stock

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IPT029N08N5
IPT029N08N5
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    1.51
  • ID (@25°C) max
    169 A
  • IDpuls max
    676 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TOLL (HSOF-8)
  • Pin Count
    8 Pins
  • Polarity
    N
  • Ptot max
    167 W
  • Qgd
    15 nC
  • QG (typ @10V)
    70 nC
  • RDS (on) (@10V) max
    2.9 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.9 K/W
  • Rth
    0.9 K/W
  • VDS max
    80 V
  • VGS(th)
    3 V
OPN
IPT029N08N5ATMA1
Product Status not for new design
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
OptiMOS™ 5 80 V power MOSFET , especially designed for Synchronous Rectification for telecom and server power supplies . In addition, the device can also be utilized in other industrial applications such as solar , low voltage drives and adapter . Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44 %
  • RDS(on) reduction of up to 43 % from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Documents

Documents

Design resources

Partner solutions

Developer community

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