Active and preferred
RoHS Compliant

IPM018N10NM5LF2

OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.8 mΩ, 176 A in 8 mm x 8 mm footprint
Data Sheet
package

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IPM018N10NM5LF2
IPM018N10NM5LF2
Data Sheet

Product details

  • ID (@25°C) max
    285 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    mTOLG (8x8)
  • Polarity
    N
  • QG (typ @10V)
    142 nC
  • RDS (on) (@10V) max
    1.85 mΩ
  • Special Features
    Wide SOA
  • VDS max
    100 V
  • VGS(th)
    3.15 V
Recommended
OPN
IPM018N10NM5LF2AUMA1
Product Status active and preferred
Infineon Package
PG-HSOG-4
Package Name mTOLG
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HSOG-4
Package Name mTOLG
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
IPM018N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the new 8x8 mTOLG, offering the industry’s lowest RDS(on) and wide SOA at 25˚C. This is a JEDEC listed package, compatible with other 8x8 mm2 gullwing package MOSFETs, i.e. LFPAK88 type. The combination of the OptiMOS™ 5 Linear FET 2 technology and the mTOLG package, is designed to provide highest power density for inrush current protection applications such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).

Features

  • 8 mm x 8 mm footprint
  • Wide safe operating area (SOA)
  • Ultra low On-Resistance
  • Lower leakage current
  • Optimized transfer characteristic

Benefits

  • Highest power density in 8x8 mm2
  • Low conduction losses
  • Rugged linear mode operation
  • Better current sharing
  • Improved gate driver compatibility

Documents

Documents

Design resources

Partner solutions

Developer community

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