not for new design
RoHS Compliant

IPG20N04S4-09A

40 V, N-Ch, 9.0 mΩ max, Automotive MOSFET, Dual SSO8 (5x6), OptiMOS™-T2
Data Sheet
package

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IPG20N04S4-09A
IPG20N04S4-09A
Data Sheet

Product details

  • ID (@25°C) max
    20 A
  • Launch year
    2014
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    Dual SSO8 (PG-TDSON-8)
  • Planned to be available until at least
    2030
  • Polarity
    N+N
  • QG (typ @10V)
    21.7 nC
  • QG (typ @10V) max
    28 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    8.6 mΩ
  • Technology
    OptiMOS™-T2
  • VDS max
    40 V
  • VGS(th)
    3 V
OPN
IPG20N04S409AATMA1
Product Status not for new design
Infineon Package
PG-TDSON-8
Package Name Dual SSO8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status not for new design
Infineon Package
PG-TDSON-8
Package Name Dual SSO8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
This Dual SSO8 MOSFET can replace two DPAKs for significant PCB area savings and system level cost reduction. The bond wire is 200um and the current capability is 20A. This product is AEC Q101 qualified.

Features

  • Dual N-channel-Normal Level-Enhancement
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Benefits

  • Large source lead for wire bonding
  • Equal performance to DPAK, same die size
  • Exposed pad for thermal transfer
  • 2 N-Channel MOSFETs; Isolated Leadframes

Applications

Documents

Documents

Design resources

Partner solutions

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