Active and preferred
RoHS Compliant
Lead-free

IPDQ65R008CM8

650 V CoolMOS™ 8 power transistor
Data Sheet
package

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IPDQ65R008CM8
IPDQ65R008CM8
Data Sheet

Product details

  • ID (@25°C) max
    270 A
  • IDpuls max
    1100 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    Q-DPAK
  • Polarity
    N
  • QG (typ @10V)
    375 nC
  • QG
    375 nC
  • RDS (on) (@ Tj = 25°C)
    6.66664 mΩ
  • Special Features
    Best price-performance with highest efficiency and fast recovery diode
  • VDS max
    650 V
Recommended
OPN
IPDQ65R008CM8XTMA1
Product Status active and preferred
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7. It comes with better efficiency compare to its predeccesor. 650 V CoolMOS™ 8 offers the additional 50 V buffer to fulfill the requirement of higher power applications. Beside these advantages, it also includes fast body diode across whole portfolio.

Features

  • Best-in-class RDS(on)*A
  • Integrated fast body diode
  • .XT interconnection
  • Top side cooling Q-DPAK package
  • 12000 cycle TCoB
  • Minimized cost of maintenance

Benefits

  • Increased power density
  • Ease of use and fast design-in
  • Simplified portfolio
  • Reduced assembly cost
  • Space reduction
  • SMT compatible

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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