not for new design
RoHS Compliant
Lead-free

IPDD60R055CFD7

Infineon’s answer to resonant high power topologies
Data Sheet
package
ea.
in stock

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IPDD60R055CFD7
IPDD60R055CFD7
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    2.63
  • ID max
    52 A
  • ID (@25°C) max
    52 A
  • IDpuls max
    129 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    D-DPAK
  • Polarity
    N
  • Ptot max
    329 W
  • QG
    67 nC
  • QG (typ @10V)
    67 nC
  • RDS (on) (@10V) max
    55 mΩ
  • RDS (on) max
    55 mΩ
  • VDS max
    600 V
  • VGS(th)
    4 V
OPN
IPDD60R055CFD7XTMA1
Product Status not for new design
Infineon Package
PG-HDSOP-10
Package Name D-DPAK
Packing Size 1700
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-HDSOP-10
Package Name D-DPAK
Packing Size 1700
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Features

  • CoolMOS™ 7 series
  • low gate charge
  • low stored energy in COSS
  • low Qrr
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ since 1998

Benefits

  • higher switching frequencies
  • high efficiency @ soft switching
  • higher power density
  • MOSFET suits hard & resonant topologies
  • Enables high power density
  • Enables better control
  • Enables perfect electrical loops

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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