Active and preferred
RoHS Compliant

IPB80N06S2L-11

55 V, N-Ch, 10.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™
Data Sheet
package
ea.
in stock

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IPB80N06S2L-11
IPB80N06S2L-11
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.76
  • ID (@25°C) max
    80 A
  • IDpuls max
    320 A
  • Launch year
    2006
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    D2PAK (PG-TO263-3)
  • Currently planned availability until at least
    2033
  • Polarity
    N
  • Ptot max
    158 W
  • QG (typ @10V)
    62 nC
  • QG (typ @10V) max
    80 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    10.7 mΩ
  • RthJC max
    0.95 K/W
  • Technology
    OptiMOS™
  • VDS max
    55 V
  • VGS(th)
    1.6 V
Recommended
OPN
IPB80N06S2L11ATMA2
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock

Features

  • N-Channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low RDS(on)
  • 100% Avalanche tested
  • PPAP Capable Device

Benefits

  • Lowest RDS(on) at 55V in planar tech
  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

Documents

Documents

Design resources

Partner solutions

Developer community

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