Active and preferred
RoHS Compliant
Lead-free

IMW65R015M2H

CoolSiC™ MOSFET 650 V G2 in TO-247-4 package
Data Sheet
package

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IMW65R015M2H
IMW65R015M2H
Data Sheet

Product details

  • ID (@25°C) max
    93 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TO247
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    15 mΩ
  • RthJC max
    0.44 K/W
  • Technology
    CoolSiC™ G2
  • VDS max
    650 V
Recommended
OPN
IMW65R015M2HXKSA1
Product Status active and preferred
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Features

  • Excellent figures of merit (FOMs)
  • Best in class RDS(on)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGSoff=0)
  • Best immunity against turn-on effects
  • Improved package interconnect with .XT

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Ease-of-use
  • Full compatibility with existing vendors
  • Allows designs without fan or heatsink

Documents

Documents

Design resources

Partner solutions

Developer community

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