IMSQ120R017M2HB
NEW
Active and preferred
RoHS Compliant
Lead-free

IMSQ120R017M2HB

NEW
CoolSiC™ 1200 V SiC MOSFET G2 and Schottky diode G5 in top side cooled Q-DPAK dual die-pad package
Datasheet
package

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IMSQ120R017M2HB
IMSQ120R017M2HB
Datasheet


Product details

  • Ciss
    2910 pF
  • Coss
    126 pF
  • Mounting
    SMD
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PG-HDSOP-16-U03
  • Pin Count
    16 Pins
  • Ptot (@ TA=25°C) max
    789 W
  • Qgd
    19 nC
  • QG
    79 nC
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    17.1 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.26 K/W
  • Technology
    CoolSiC™ G2, CoolSiC™ G5
  • Tj max
    175 °C
  • VDS max
    1200 V

Recommended
OPN
IMSQ120R017M2HBXUMA1
Product Status active and preferred
Infineon Package
PG-HDSOP-16
Package Name N/A
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT,MY

Product Status
Active
Infineon Package
PG-HDSOP-16
Package Name -
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
AT,MY
CoolSiC™ 1200 V boost stage combining a 17.1 mOhm CoolSiC™ MOSFET and 50 A Schottky diode in a top-side cooled Q-DPAK package with dual die-pad configuration. Designed for industrial power conversion, it offers simplified assembly, excellent thermal performance, and high power density. The optimized layout enables improved efficiency, superior thermal management, and reduced system cost.

Features

  • VDSS = 1200 V at Tvj = 25°C
  • IDDC = 74 A at TC = 25°C
  • RDS = 17.1 mΩ, VGS = 18 V, Tvj = 25°C
  • IF = 50 A
  • Optimized layout for fast switching
  • Very low switching losses
  • No reverse recovery current
  • High surge-current Schottky diode
  • Short circuit withstand time 2 µs
  • Best-in-class VGS(th): 4.2 V
  • .XT interconnection technology

Benefits

  • Higher power density
  • Enabling automated assembly
  • Less complex designs needed
  • Outstanding thermal performance vs BSC
  • Improve system power losses
  • Enable a VRMS of 950 V with PD 2
  • Lower BOM cost
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