Active and preferred
RoHS Compliant
Lead-free

IMDQ65R010M2H

CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 10 mΩ
ea.
in stock

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IMDQ65R010M2H
IMDQ65R010M2H
ea.

Product details

  • ID (@25°C) max
    154 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PG-HDSOP-22
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    10 mΩ
  • RthJC max
    0.23 K/W
  • Technology
    CoolSiC™ G2
  • VDS max
    650 V
OPN
IMDQ65R010M2HXUMA1
Product Status active and preferred
Infineon Package
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.

Features

  • Excellent figures-of-merit (FOMs)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGS,off=0)
  • Lower thermal resistance
  • Improved package interconnect with .XT
  • Top-side cooling

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Simplifies assembly and cooling
  • Water cooling "ready"
  • Allows designs without fan or heatsink
  • Lower stray inductances
  • Better gate control

Documents

Design resources

Developer community

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