Active
RoHS Compliant
Lead-free

IKY75N120CH3

1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package
Data Sheet
package
ea.
in stock

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IKY75N120CH3
IKY75N120CH3
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    2.9 mJ
  • Eon
    3.4 mJ
  • IC (@ 100°) max
    75 A
  • IC (@ 25° ) max
    150 A
  • ICpuls max
    300 A
  • IF max
    75 A
  • IFpuls max
    300 A
  • Irrm
    41 A
  • Package
    TO-247-4
  • Ptot max
    938 W
  • QGate
    370 nC
  • Qrr
    4900 nC
  • RGint
    0 Ω
  • RG
    6 Ω
  • Switching Frequency
    18 kHz to 60 kHz
  • td(off)
    303 ns
  • td(on)
    38 ns
  • Technology
    IGBT HighSpeed 3
  • tf
    32 ns
  • tr
    32 ns
  • tSC
    10 µs
  • VCE(sat)
    2 V
  • VCE max
    1200 V
  • VF
    1.9 V
Recommended
OPN
IKY75N120CH3XKSA1
Product Status active
Infineon Package
PG-TO247-4
Package Name PLUS
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-4
Package Name PLUS
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 1200 V, 75 A High Speed IGBT in TO247 PLUS package with soft, fast recovery full current rated anti-parallel emitter controlled diode. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts

Features

  • Extremely low cont. inductance loop
  • Emitter pin for driver feedback
  • Reduced switching losses
  • 75 A, 1200 V IGBT
  • Co-packed with 75 A diode
  • TO-247 footprint
  • Higher current capability
  • Improved thermal behaviour
  • Extended C-E creepage

Documents

Documents

Design resources

Partner solutions

Developer community

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