Active and preferred
RoHS Compliant
Lead-free

IKWH30N65WR5

650 V, 30 A IGBT with anti-parallel diode in TO-247-3-HCC package
ea.
in stock

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IKWH30N65WR5
IKWH30N65WR5
ea.

Product details

  • Eoff (Hard Switching)
    0.04 mJ
  • Eon
    0.87 mJ
  • IC (@ 25°) max
    60 A
  • IC (@ 100°) max
    30 A
  • ICpuls max
    90 A
  • IF max
    23 A
  • IFpuls max
    45 A
  • Irrm
    28.6 A
  • Package
    TO-247-3-HCC
  • Ptot max
    95 W
  • QGate
    133 nC
  • Qrr
    2600 nC
  • RGint
    0 Ω
  • RG
    27 Ω
  • Switching Frequency
    20 kHz to 60 kHz
  • td(off)
    398 ns
  • td(on)
    41 ns
  • Technology
    TRENCHSTOP™ 5 WR5
  • tf
    18 ns
  • tr
    20 ns
  • VCE(sat)
    1.4 V
  • VCE max
    650 V
  • VF
    1.3 V
  • VGE(th)
    4 V
OPN
IKWH30N65WR5XKSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
High speed 650 V, 30 A reverse conducting TRENCHSTOP™ 5 WR5 IGBT in high creepage and clearance TO-247-3-HCC package. It is specifically optimized for PFC stage in RAC / CAC and DC/DC in Welding application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for price sensitive customers. WR5 IGBT in TO-247-3-HCC also enable more reliable design with the increased clearance and creepage distances.

Features

  • Lowest VCEsat1.4 V at 25°C
  • Monolithically integrated diode
  • Lowest Ets
  • Good Rgcontrollability
  • High creepage and clearance package

Benefits

  • Very good price/performance ratio
  • Optimized diode
  • Low Tj& Tc for lower heatsink
  • reliable against contamination

Documents

Design resources

Developer community

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