Active and preferred
RoHS Compliant
Lead-free

IKW50N65SS5

650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
Data Sheet
package
ea.
in stock

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IKW50N65SS5
IKW50N65SS5
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.55 mJ
  • Eon
    0.32 mJ
  • IC (@ 100°) max
    60.5 A
  • IC (@ 25°) max
    80 A
  • ICpuls max
    200 A
  • IF max
    38.5 A
  • IFpuls max
    150 A
  • Package
    TO-247-3
  • Ptot max
    274 W
  • QGate
    110 nC
  • RGint
    0 Ω
  • RG
    9 Ω
  • Switching Frequency
    10 kHz to 30 kHz
  • td(off)
    140 ns
  • td(on)
    20 ns
  • Technology
    Silicon Carbide Schottky Diode, IGBT TRENCHSTOP™ 5
  • tf
    20 ns
  • tr
    10 ns
  • VCE(sat)
    1.35 V
  • VCE max
    650 V
  • VF
    1.35 V
Recommended
OPN
IKW50N65SS5XKSA1
Product Status active and preferred
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
TRENCHSTOP™ 5 S5 650 V, 50 A IGBT discrete co-packed with full-rated CoolSiC™ Schottky diode G6 in TO247-3 package. This IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. The CoolSiC™ hybrid discretes further reduce switching losses at almost unchanged dv/dt and di/dt values.

Features

  • Ultra-Low switching losses
  • TRENCHSTOP™ 5 IGBT
  • CoolSiC™ diode
  • Very low on-state losses
  • Benchmark switching efficiency*
  • *in hard switching topologies
  • Pb-free plating: RoHS compliant
  • Qualified acc. to JEDEC 47/20/22

Documents

Documents

Design resources

Partner solutions

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