not for new design
RoHS Compliant
Lead-free

IKP30N65H5

650 V, 30 A IGBT with anti-parallel diode in TO-220 package
Data Sheet
package
ea.
in stock

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IKP30N65H5
IKP30N65H5
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.1 mJ
  • Eon
    0.28 mJ
  • IC (@ 100°) max
    35 A
  • IC (@ 25° ) max
    55 A
  • ICpuls max
    90 A
  • IF max
    36 A
  • IFpuls max
    90 A
  • Irrm
    14.3 A
  • Package
    TO-220-3
  • Ptot max
    188 W
  • QGate
    70 nC
  • Qrr
    410 nC
  • RGint
    0 Ω
  • RG
    23 Ω
  • Switching Frequency
    30 kHz to 100 kHz
  • td(off)
    180 ns
  • td(on)
    18 ns
  • Technology
    IGBT TRENCHSTOP™ 5
  • tf
    22 ns
  • tr
    4 ns
  • VCE(sat)
    1.65 V
  • VCE max
    650 V
  • VF
    1.35 V
OPN
IKP30N65H5XKSA1
Product Status not for new design
Infineon Package
PG-TO220-3
Package Name TO220
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-TO220-3
Package Name TO220
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
High Speed 650 V, 30 A TRENCHSTOP™ 5 IGBT in a TO-220 package copacked with fast and soft RAPID 1 anti-parallel diode.

Features

  • 650 V breakthrough voltage
  • Compared to our HighSpeed 3 family
  • Factor 2.5 lower Qg
  • Factor 2 reduced switching losses
  • 200 mV reduced VCE(sat)
  • Co-packed with rapid Si-diode
  • Low COES/EOSS
  • Mild pos. temp. coeffi. VCE(sat)
  • Temperature stability of Vf

Documents

Documents

Design resources

Partner solutions

Developer community

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