Active
RoHS Compliant
Lead-free

IKFW90N60EH3

Data Sheet
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IKFW90N60EH3
IKFW90N60EH3
Data Sheet

Product details

  • Eoff (Hard Switching)
    1.3 mJ
  • Eon
    2.65 mJ
  • IC (@ 25°) max
    95 A
  • ICpuls max
    300 A
  • IF max
    80 A
  • IFpuls max
    300 A
  • Irrm
    39 A
  • Package
    PG-TO247-3
  • Ptot max
    178 W
  • QGate
    440 nC
  • Qrr
    4.93 nC
  • RGint
    0 Ω
  • RG
    5 Ω
  • Switching Frequency
    18 kHz to 60 kHz
  • td(off)
    210 ns
  • td(on)
    32 ns
  • Technology
    IGBT HighSpeed 3
  • tf
    27 ns
  • tr
    45 ns
  • tSC
    5 µs
  • VCE(sat)
    1.85 V
  • VCE max
    600 V
  • VF
    1.45 V
Recommended
OPN
IKFW90N60EH3XKSA1
Product Status active
Infineon Package
PG-HSIP247-3
Package Name TO-247-3 advanced isolation
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HSIP247-3
Package Name TO-247-3 advanced isolation
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
High speed hard switching 600 V, 75 A third generation TRENCHSTOP™ IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.The new isolated package TO247 advanced isolation enables the highest power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.

Features

  • Short circuit withstand time 5μs
  • Positive temp. coeffi. in VCEsat
  • Low EMI
  • Very soft, fast recovery diode
  • Maximum junction temperature 175°C
  • 2500 VRMSelectrical isolation
  • 100% tested isolated mount. surface
  • Pb-free plating: RoHS compliant
  • Qualified acc. to JEDEC 47/20/22

Documents

Documents

Design resources

Partner solutions

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