Active and preferred
RoHS Compliant
Lead-free

IKFW50N65ES5

650 V, 50 A IGBT with anti-parallel diode in TO-247 package

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IKFW50N65ES5
IKFW50N65ES5

Product details

  • Eoff (Hard Switching)
    0.86 mJ
  • Eon
    0.4 mJ
  • IC (@ 25°) max
    69 A
  • ICpuls max
    160 A
  • IF max
    68 A
  • IFpuls max
    160 A
  • Irrm
    23 A
  • Package
    PG-HSIP247-3-1
  • Ptot max
    127 W
  • QGate
    95 nC
  • Qrr
    1.11 nC
  • RGint
    0 Ω
  • RG
    10 Ω
  • Switching Frequency
    10 kHz to 30 kHz
  • td(off)
    130 ns
  • td(on)
    19 ns
  • Technology
    IGBT TRENCHSTOP™ Advanced Isolation
  • tf
    23 ns
  • tr
    18 ns
  • VCE(sat)
    1.35 V
  • VCE max
    650 V
  • VF
    1.45 V
OPN
IKFW50N65ES5XKSA1
Product Status active and preferred
Infineon Package
Package Name TO-247-3 advanced isolation
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name TO-247-3 advanced isolation
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Hard-switching 650 V, 50 A TRENCHSTOP™ 5 S5 IGBT discrete in TO247 advanced isolation package. This IGBT technology addresses applications switching between 10 kHz and 40 kHz. This package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.

Features

  • Very Low VCEsatof 1.35 V at 25°C
  • 4 times Ic pulse current (100°C Tc)
  • Soft current fall characteristics
  • Symmetrical, low voltage overshoot
  • Gate voltage under control
  • No risk of unwanted turn-on
  • No need for gate clamping
  • 2500 VRMS electrical isolation
  • 100 % tested isol. mounting surface
  • Pb-free plating: RoHS compliant
  • Qualified acc. to JEDEC 47/20/22

Documents

Design resources

Developer community

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