Active and preferred
RoHS Compliant

IKB30N65ES5

650 V, 30 A IGBT with anti-parallel diode in TO-263 package
Data Sheet
package
ea.
in stock

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IKB30N65ES5
IKB30N65ES5
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.32 mJ
  • Eon
    0.56 mJ
  • IC (@ 25°) max
    62 A
  • IC (@ 100°) max
    39.5 A
  • ICpuls max
    120 A
  • IF max
    39.5 A
  • IFpuls max
    120 A
  • Irrm
    18 A
  • Package
    D2PAK (TO-263-3)
  • Ptot max
    188 W
  • QGate
    70 nC
  • Qrr
    600 nC
  • RGint
    0 Ω
  • RG
    13 Ω
  • Switching Frequency
    10 kHz to 40 kHz
  • td(off)
    124 ns
  • td(on)
    17 ns
  • Technology
    IGBT TRENCHSTOP™ 5
  • tf
    30 ns
  • tr
    12 ns
  • VCE(sat)
    1.35 V
  • VCE max
    650 V
  • VF
    1.45 V
Recommended
OPN
IKB30N65ES5ATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 650 V, 30 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

Features

  • Very Low VCEsatof 1.35 V at 25 °C
  • ICn=4x nominal current (100 °C Tc)
  • Soft current fall characteristics
  • No tail current
  • Symmetrical, low voltage overshoot
  • Maximum Tvj=175 °C
  • Qualif. accor. to JEDEC standards
  • Gate voltage under control:
  • No risk of unwanted turn-on
  • No need for gate clamping

Documents

Documents

Design resources

Partner solutions

Developer community

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