Active and preferred
RoHS Compliant

IKB30N65EH5

650 V, 30 A IGBT with anti-parallel diode in TO-263 package
Data Sheet
package
ea.
in stock

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IKB30N65EH5
IKB30N65EH5
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.3 mJ
  • Eon
    0.87 mJ
  • IC (@ 25°) max
    55 A
  • IC (@ 100°) max
    35 A
  • ICpuls max
    120 A
  • IF max
    39.5 A
  • IFpuls max
    90 A
  • Irrm
    12 A
  • Package
    D2PAK (TO-263-3)
  • Ptot max
    188 W
  • QGate
    70 nC
  • Qrr
    500 nC
  • RGint
    0 Ω
  • RG
    22 Ω
  • Switching Frequency
    30 kHz to 100 kHz
  • td(off)
    159 ns
  • td(on)
    24 ns
  • Technology
    IGBT TRENCHSTOP™ 5
  • tf
    25 ns
  • tr
    28 ns
  • VCE(sat)
    1.65 V
  • VCE max
    650 V
  • VF
    1.45 V
Recommended
OPN
IKB30N65EH5ATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 650 V, 30 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full rated current Rapid 1 anti parallel diode, redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. This family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Features

  • 650 V breakthrough voltage
  • Compared to HighSpeed 3 family
  • Factor 2.5 lower Qg
  • Factor 2 reduced switching losses
  • 200 mV reduction in VCE(sat)
  • Co-packed with Rapid Si-diode
  • Low COES/EOSS
  • Mild pos. temp. coeffi. VCE(sat)
  • Temperature stability of Vf

Documents

Documents

Design resources

Partner solutions

Developer community

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